TrendForce says that TSMC plans to repurpose its Hsinchu Fab 5, which handles GaN production, for advanced packaging.

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

Once emerged from the process, Wolfspeed says it expects to have reduced its overall debt by approximately 70 percent, representing a reduction of approximately $4.6 billion and a reduction of its ...

ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...

Wise Integration, a French pioneer in digital control for GaN and GaN IC-based power supplies, has released its first fully ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...